Super Fast Recovery Diode
RFV12TJ6S
lSerise Standard Fast Recovery lApplication General rectification
28.56±0.2 16.0±0.1 3.95±0.1 3
Data Sheet
lDimensions (Unit : mm)
f3.1±0.1 10.2±0.2 4.5±0.1 2.6±0.1
lStructure
6
For PFC (CCM : Continuous Current Mode) lFeatures 1) Hyper fast recovery / Hard recovery type 2) Ultra low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type
9.05±0.1
15.05±0.1
RFV12 TJ6S 1
2
Cathode
Anode
2.6±0.1 9.56±0.2 1.4±0.2 13..
Super Fast Recovery Diode
Super Fast Recovery Diode
RFV12TJ6S
lSerise Standard Fast Recovery lApplication General rectification
28.56±0.2 16.0±0.1 3.95±0.1 3
Data Sheet
lDimensions (Unit : mm)
f3.1±0.1 10.2±0.2 4.5±0.1 2.6±0.1
lStructure
6
For PFC (CCM : Continuous Current Mode) lFeatures 1) Hyper fast recovery / Hard recovery type 2) Ultra low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type
9.05±0.1
15.05±0.1
RFV12 TJ6S 1
2
Cathode
Anode
2.6±0.1 9.56±0.2 1.4±0.2 13.51
0.6±0.1 2.54±0.1 0.83±0.1 5.08±0.1 ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code
2
: Serial number
lAbsolute Maximum Ratings (Tc= 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average current
Non-repetitive forward surge current
Symbol VRM VR Io IFSM Tj Tstg
Conditions Duty≦0.5 Direct reverse voltage
60Hz half sin wave , resistive load
Tc=50°C
60Hz half sin wave, one cycle, non-repetitive at T j=25°C
Limits 600 600 12 120 150 -55 to +150
Unit V V A A °C °C
Operating junction temperature Storage temperature
-
lElectrical Characteristics (Tj = 25°C) Parameter Forward voltage Reverse current Reverse recovery time Reverse recovery current Reverse recovery charges Forward recovery time Forward recovery voltage Thermal resistance Symbol VF IR trr IRp Qrr tfr
VFp Rth(j-a) Rth(j-c)
Conditions IF=12A VR=600V
Tj=25°C Tj=125°C Tj=25°C Tj=125°C
Min. 1.6 -
Typ. Max. Unit 2.3 1.55 0.03 8 18 27 6.0 180 120 5.5 2.8 10 200 25 45 7.0 3.0 V V mA mA ns ns.