RFW0836-10

Power Amplifier Product Features Small size by using simple matching circuit board Single Supply Voltage Heat sink 99.9% copper, gold plated High Productivity Low Manufacturing Cost GaAs HFET RFW0836-10 Application Cellular Repeater RF Sub-Systems Base Station www.DataSheet4U.com Package : DP-56 Description The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding. The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage. For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink. This simplicity results cost competitiveness and performance enhancement. Specifications PARAMETER Frequency Range (MHz) Small Signal Gain (dB) Gain Flatness (Max.) Gain Variation Over Temp Output Return Loss Output P1dB CDMA Power (1 FA) OIP3 @ tone / 27 dBm Noise Figure Drain Voltage Drain Dimensions inCurrent mm Operating Temp Range Dimensions (W×L×H) NOTE * CDMA : 1.23MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available @ ±750KHz and ±1.98MHz offset in 30KHz resolution bandwidth * RFW Series : Internally Matched Module Min Typ 824 ~ 849 30 ± 0.5dB @ 50MHz BW ± ...