IGBT. RGT00TS65D Datasheet

RGT00TS65D Datasheet PDF

Part RGT00TS65D
Description Field Stop Trench IGBT
Feature RGT00TS65D 650V 50A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 50A .
Manufacture Rohm
Datasheet
Download RGT00TS65D Datasheet

RGT00TS65D 650V 50A Field Stop Trench IGBT Data Sheet VCES RGT00TS65D Datasheet




RGT00TS65D
RGT00TS65D
650V 50A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.65V
277W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
TO-247N
lInner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Tube
-
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Welder
Taping Code
C11
Marking
RGT00TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
85
50
150
50
30
150
277
138
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.B



RGT00TS65D
RGT00TS65D
lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c)
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 0.54 °C/W
- - 1.42 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 34.7mA 5.0
IC = 50A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
6.0
1.65
2.2
7.0
2.1
-
V
V
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/11
2014.05 - Rev.B




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