RGT30NS65D

RGT30NS65D 650V 15A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 15A 1.65V 133W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline LPDS / TO-262 (2) (1) (3) lInner Circuit (2) *1 (1) (3) (1)(2)(3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant lApplications General Inverter lPackaging Specifications Packaging Reel Size (mm) Taping / Tube 330 / - UPS Power Conditioner Tape Width (mm) 24 / - Type Basic Ordering Unit (pcs) 1,000 / 1,000 Welder Packing code TL / C9 Marking RGT30NS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 650 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 IF IF IFP*1 PD PD 30 15 45 26 15 45 133 66 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax. Tstg -55 to +175 Unit V V A A A A A A W W °C °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 2015.11 - Rev.C RGT30NS65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) ...