RGT80TS65D

RGT80TS65D 650V 40A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 40A 1.65V 234W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline TO-247N lInner Circuit (1)(2)(3) (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant lApplications General Inverter lPackaging Specifications Packaging Reel Size (mm) Tube - UPS Power Conditioner Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Welder Taping Code C11 Marking RGT80TS65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Forward Current Diode Pulsed Forward Current TC = 25°C TC = 100°C Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature *1 Pulse width limited by Tjmax. VCES VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg 650 30 70 40 120 40 20 120 234 117 -40 to +175 -55 to +175 V V A A A A A A W W °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/11 2014.05 - Rev.B RGT80TS65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Typ. Max. Unit - - 0.64 °C/W ...