RGTH50TS65

RGTH50TS65 650V 25A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 25A 1.6V 174W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching Loss & Soft Switching 4) Pb - free Lead Plating ; RoHS Compliant lOutline TO-247N lInner Circuit (2) (1)(2)(3) (1) (1) Gate (2) Collector (3) Emitter (3) lApplications PFC lPackaging Specifications Packaging Tube UPS Reel Size (mm) - Power Conditioner IH Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Taping Code C11 Marking RGTH50TS65 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature *1 Pulse width limited by Tjmax. VCES VGES IC IC ICP*1 PD PD Tj Tstg 650 30 50 25 100 174 87 -40 to +175 -55 to +175 V V A A A W W °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/9 2014.05 - Rev.B RGTH50TS65 lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Data Sheet Symbol Rθ(j-c) Values Min. Typ. Max. Unit - - 0.86 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Unit V Collector Cut - off Curre...