RGTH80TS65

RGTH80TS65 650V 40A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 40A 1.6V 234W Features 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching Loss & Soft Switching 4) Pb - free Lead Plating ; RoHS Compliant Outline TO-247N Inner Circuit (2) (1)(2)(3) (1) (1) Gate (2) Collector (3) Emitter (3) Applications PFC UPS Power Conditioner IH Packaging Specifications Packaging Tube Reel Size (mm) - Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Packing code C11 Marking RGTH80TS65 Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature *1 Pulse width limited by Tjmax. VCES VGES IC IC ICP*1 PD PD Tj Tstg 650 30 70 40 160 234 117 40 to +175 55 to +175 Unit V V A A A W W °C °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/9 2015.10 - Rev.C RGTH80TS65 Thermal Resistance Parameter Thermal Resistance IGBT Junction - Case Data Sheet Symbol Rθ(j-c) Values Min. Typ. Max. Unit - - 0.64 °C/W IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Unit V Collector Cut - off Current...