RHK003N06FRA

RHK003N06FRA Nch 60V 300mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 60V 1.0Ω ±300mA 200mW lFeatures 1) Very fast switching 2) Pb-free lead plating ; RoHS compliant. 3) AEC-Q101 Qualified lOutline SOT-346 SC-59 SMT3 lInner circuit Datasheet AEC-Q101 Qualified lApplication Switching circuits lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP*1 VGSS PD*2 Tj Tstg 60 ±300 ±1.2 ±20 200 150 -55 to +150 Embossed Tape 180 8 3000 T146 RKS Unit V mA A V mW ℃ ℃ www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 1/10 20221214 - Rev.002 RHK003N06FRA lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*2 Values Unit Min. Typ. Max. - - 625 ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient ΔV(BR)DSS　 ID = 1mA ΔTj referenced to 25℃ Zero gate voltage drain current IDSS VDS = 60V, VGS = 0V Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) ΔVGS(th) ΔTj VDS = 10V, ID = 1mA ID...