RHU002N06FRA

4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channel MOSFET transistor Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. AEC-Q101 Qualified Dimensions (Unit : mm) UMT3 SOT-323 2.0 0.3 (3) 0.9 0.2 0.7 1.25 2.1 0.1Min. (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : KP Applications Switching Packaging specifications Package Code Type Basic ordering unit (pieces) RRHHUU000022NN0066FRA Taping T106 3000 Equivalent circuit (3) (2) ∗2 Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed ID IDP ∗1 Source current (Body diode) Continuous Pulsed Total power dissipation IS ISP ∗1 PD ∗2 Channel temperature Tch Storage temperature Tstg ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended Limits 60 ±20 ±200 ±800 200 800 200 150 −55 to +150 Unit V V mA mA mA mA mW °C °C Thermal resistance Parameter Symbol Channel to ambient Rth (ch-a)∗ ∗ With each pin mounted on the recommended land. Limits 625 Unit °C / W ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exc...