RJK0332DPB-01
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate dr...
RJK0332DPB-01
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 3.6 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
4 G
Preliminary Datasheet
R07DS0268EJ0500 (Previous: REJ03G1641-0400)
Rev.5.00 Mar 01, 2011
5 D
SSS 123
1, 2, 3 Source 4 Gate 5 Drain
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3
Tch
Tstg
Ratings 30 20 35 140 35 15 22.5 45 2.78 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0268EJ0500 Rev.5.00 Mar 01, 2011
Page 1 of 6
RJK0332DPB-01
Electrical Characteristics
Item Drain to source breakdown
voltage Gate to source leak current Zero gate
voltage drain current Gate to source cutoff
voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off...