RJK0603DPN-E0
N-Channel MOS FET 60 V, 80 A, 5.2 m
Features
High speed switching Low drive current Low on-resistan...
RJK0603DPN-E0
N-Channel MOS FET 60 V, 80 A, 5.2 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Package TO-220AB
Outline
RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB)
4
123
1G
Preliminary Datasheet
R07DS0654EJ0200 Rev.2.00
Aug 24, 2012
2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3
Absolute Maximum Ratings
Item
Symbol
Drain to source
voltage
VDSS
Gate to source
voltage
VGSS
Drain current Drain peak current
ID ID (pulse) Note1
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
IDR IAP Note2 EAS Note2 Pch Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L = 100 H , Tch = 25C, Rg 50,
3. Tc = 25C
Ratings 60 ±20 80 240 80 40 120 125 1.0 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0654EJ0200 Rev.2.00 Aug 24, 2012
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RJK0603DPN-E0
Preliminary
Electrical Characteristics
Item Drain to source breakdown
voltage Gate to source leak current Zero gate
voltage drain current Gate to source cutoff
voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward
voltage Body...