RJK0630JPE

RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 6.2 mΩ typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 2100 pF typ. Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4. AEC-Q101 compliant Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics Channel to case thermal impedance θch-c: 1.76°C/W Preliminary Datasheet R07DS0340EJ0100 Rev.1.00 Apr 18, 2011 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Value 60 ±20 75 300 75 300 35 105 85 175 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C °C R07DS0340EJ0100 Rev.1.00 Apr 18, 2011 Page 1 of 6 RJK0630JPE Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time...