RJK4036DP3-A0
400V - 3A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 2.4 typ. (at ID = ...
RJK4036DP3-A0
400V - 3A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
Low drive current High density mounting
Outline
RENESAS Package code: PRSP0004ZB-A Package name: SOT-223
4
3 2 1
G
Absolute Maximum Ratings
Item
Symbol
Drain to source
voltage
VDSS
Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current
VGSS
IDNote1
ID
Note2 (pulse)
IDR Note1
IDR
Note2 (pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.. Value at Tc = 25C
2. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0838EJ0100 Rev.1.00
Jul 05, 2011
D
1. Gate 2. Drain 3. Source 4. Drain
S
Ratings 400 ±30 3 6 3 6 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A C C
R07DS0838EJ0100 Rev.1.00 Jul 05, 2011
Page 1 of 3
RJK4036DP3-A0
Preliminary
Electrical Characteristics
Item
Symbol Min Typ Max Unit
Drain to source breakdown
voltage Zero gate
voltage drain current Gate to source leak current
V(BR)DSS
400
—
—V
IDSS
—
—
1 A
IGSS — — ±0.1 A
Gate to source cutoff
voltage Static drain to source on state resistance
VGS(off)
3.0
—
4.5 V
RDS(on)
—
2.4
2.9
Input capacitance
Ciss — 165 — pF
Output capacitance
Coss
—
25
— pF
Reverse transfer capacitance
Crss
—
3.5
— pF
Turn-on delay time
td(on)
—
11
— ns
Rise time
tr — 12 — ns
Turn-off delay ...