RJK5002DJE

RJK5002DJE 500V - 2.4A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)  High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation VDSS VGSS ID Note1 ID(pulse) Note3 IDR Note1 IDR(pulse) Note3 Pch Note 2 Channel to ambient thermal Impedance ch-a Channel temperature Tch Storage temperature Tstg Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. Pulse width limited by safe operating area. Preliminary Datasheet R07DS0844EJ0100 Rev.1.00 Jul 05, 2012 D 1. Source 2. Drain 3. Gate S Value 500 30 2.4 4.8 2.4 4.8 0.9 139 150 –55 to +150 (Ta = 25C) Unit V V A A A A W C/W C C R07DS0844EJ0100 Rev.1.00 Jul 05, 2012 Page 1 of 3 RJK5002DJE Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance IDSS IGSS VGS(off) RDS(on) — — 3.0 — — — — 3.83 1 0.1 4.5 5.00 A VDS = 500 V, VGS = 0 A VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA  ID = 1.2 A, VGS = 10 V Note 4 ...