RKD750KP

www.DataSheet4U.com RKD750KP Silicon Schottky Barrier Diode for Detector REJ03G1460-0200 Rev.2.00 Feb 22, 2007 Features Low forward voltage, Low capacitance and High detection sensitivity. Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type). Ordering Information Part No. RKD750KP Laser Mark A Package Name MP6 Package Code PXSN0002ZB-A Pin Arrangement Cathode mark Mark A 1 2 1. Cathode 2. Anode Rev.2.00 Feb 22, 2007 page 1 of 4 RKD750KP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 2 5 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Capacitance 1 ESD-Capability * Symbol VF1 VF2 C — Min — — — 10 Typ — — 0.3 — Max 0.15 0.27 — — Unit V pF V Test Condition IF = 0.1 mA IF = 1 mA VR = 0.5 V, f = 1 MHz C = 200 pF, RL = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. Rev.2.00 Feb 22, 2007 page 2 of 4 RKD750KP Main Characteristic 10–2 10–2 Reverse current IR (A) Forward current IF (A) 10–3 10–3 Ta = 75°C 10–4 10–4 Ta = 25°C 10–5 10–5 10–6 0 0.1 0.2 0.3 0.4 0.5 10–6 0 1 2 3 4 5 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Rev...