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RKP200KP Datasheet

Part Number RKP200KP
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon Epitaxial Planar Pin Diode
Datasheet RKP200KP DatasheetRKP200KP Datasheet (PDF)

  RKP200KP   RKP200KP
www.DataSheet4U.com RKP200KP Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1303-0300 Rev.3.00 Feb 21, 2007 Features • • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type) Ordering Information Part No. RKP200KP Laser Mark 7 Package Name MP6 Package Code PXSN0002ZB-A Pin Arrangement Cathode mark Mark 1 2 1. Cathode 2. Anode Rev.3.00 Feb 21, 2007 page 1 of 4 7 RKP200KP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf — Min — — — — 100 Typ — — .






Silicon Epitaxial Planar Pin Diode

www.DataSheet4U.com RKP200KP Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1303-0300 Rev.3.00 Feb 21, 2007 Features • • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type) Ordering Information Part No. RKP200KP Laser Mark 7 Package Name MP6 Package Code PXSN0002ZB-A Pin Arrangement Cathode mark Mark 1 2 1. Cathode 2. Anode Rev.3.00 Feb 21, 2007 page 1 of 4 7 RKP200KP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf — Min — — — — 100 Typ — — — — — Max 1.0 100 0.35 1.3 — Unit V nA pF Ω V Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. Rev.3.00 Feb 21, 2007 page 2 of 4 RKP200KP Main Characteristic 10−2 10−7 10−4 10−8 Reverse current IR (A) Forward current IF (A) 10−9 10−10 10 −6 10−8 10−11.



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