RKP200KP Datasheet
Part Number |
RKP200KP |
Manufacturers |
Renesas Technology |
Logo |
|
Description |
Silicon Epitaxial Planar Pin Diode |
Datasheet |
RKP200KP Datasheet (PDF) |
www.DataSheet4U.com
RKP200KP
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G1303-0300 Rev.3.00 Feb 21, 2007
Features
• • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type)
Ordering Information
Part No. RKP200KP Laser Mark 7 Package Name MP6 Package Code PXSN0002ZB-A
Pin Arrangement
Cathode mark Mark 1 2 1. Cathode 2. Anode
Rev.3.00 Feb 21, 2007 page 1 of 4
7
RKP200KP
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf — Min — — — — 100 Typ — — .
Silicon Epitaxial Planar Pin Diode
www.DataSheet4U.com
RKP200KP
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G1303-0300 Rev.3.00 Feb 21, 2007
Features
• • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type)
Ordering Information
Part No. RKP200KP Laser Mark 7 Package Name MP6 Package Code PXSN0002ZB-A
Pin Arrangement
Cathode mark Mark 1 2 1. Cathode 2. Anode
Rev.3.00 Feb 21, 2007 page 1 of 4
7
RKP200KP
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf — Min — — — — 100 Typ — — — — — Max 1.0 100 0.35 1.3 — Unit V nA pF Ω V Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
Rev.3.00 Feb 21, 2007 page 2 of 4
RKP200KP
Main Characteristic
10−2 10−7
10−4
10−8
Reverse current IR (A)
Forward current IF (A)
10−9 10−10
10
−6
10−8
10−11.
2007-09-11 : 2N6989U BCR08AS-12 BCR5KM-12LB BCR5PM-12L CER0205A CER08C01SM CER08C02SM CER6080 CERPACK CR05AS-8