Pin Diode. RKP202KN Datasheet

RKP202KN Datasheet PDF


Part Number

RKP202KN

Description

Silicon Epitaxial Trench Pin Diode

Manufacture

Renesas

Total Page 5 Pages
Datasheet
Download RKP202KN Datasheet



RKP202KN
RKP202KN
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G1312-0100
Rev.1.00
Dec 16, 2005
Features
Adopting the trench structure improves low capacitance. (C = 0.43 pF max)
Low forward resistance. (rf = 1.80 max)
Low operation current.
Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and
products.
Ordering Information
Type No.
RKP202KN
Laser Mark
5
Package Name
MP8
Package Code
(Previous Code)
PXSN0002ZA-A
Pin Arrangement
Cathode mark
Mark
12
1. Cathode
2. Anode
Rev.1.00 Dec 16, 2005 page 1 of 4

RKP202KN
RKP202KN
Absolute Maximum Ratings
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
VR
IF
Pd
Tj
Tstg
Symbol
Value
30
100
100
125
55 to +125
(Ta = 25°C)
Unit
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit
Test Condition
Reverse current
Forward voltage
Capacitance
Forward resistance
ESD-Capability *1
IR
VF
C
rf
— — 100 nA VR = 30 V
0.90
V IF = 2 mA
0.43
pF VR = 1 V, f = 1 MHz
1.80
IF = 2 mA, f = 100 MHz
100 —
— V C = 200 pF, R = 0 , Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. Please do not use the soldering iron due to avoid high stress to the MP8 package.
Rev.1.00 Dec 16, 2005 page 2 of 4




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