RKP202KN

RKP202KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1312-0100 Rev.1.00 Dec 16, 2005 Features Adopting the trench structure improves low capacitance. (C = 0.43 pF max) Low forward resistance. (rf = 1.80 Ω max) Low operation current. Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and products. Ordering Information Type No. RKP202KN Laser Mark 5 Package Name MP8 Package Code (Previous Code) PXSN0002ZA-A Pin Arrangement 5 Cathode mark Mark 12 1. Cathode 2. Anode Rev.1.00 Dec 16, 2005 page 1 of 4 RKP202KN Absolute Maximum Ratings Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature VR IF Pd Tj Tstg Symbol Value 30 100 100 125 −55 to +125 (Ta = 25°C) Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 IR VF C rf — — — 100 nA VR = 30 V — — 0.90 V IF = 2 mA — — 0.43 pF VR = 1 V, f = 1 MHz — — 1.80 Ω IF = 2 mA, f = 100 MHz 100 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP8 package. Rev.1.00 Dec 16, 2005 page 2 of 4 RKP202KN Main Characteristic 10-2 10-4 Forward current IF (A) 10-6 10-8 10-10 10-12 0 0.2 0.4 0.6 0.8 1.0 Forwar...