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RM3334 Datasheet

Part Number RM3334
Manufacturers Adesto
Logo Adesto
Description 32-256Kbit Ultra Low Power Non-volatile Serial Memory
Datasheet RM3334 DatasheetRM3334 Datasheet (PDF)

RM333X Series 32-256Kbit Ultra Low Power Non-volatile Serial Memory - SPI Bus Features ADVANCE DATASHEET  Memory array: 32-256Kbit EEPROM-compatible non-volatile serial memory  Multiple supply voltages for minimum power consumption - VDDC: 1.17-1.23V - VDDIO: 3.0-3.6V  Serial peripheral interface (SPI) compatible -Supports SPI modes 0 and 3  1.0 MHz maximum clock rate  Flexible Programming - Byte/Page Program (1 to 32 or 64Bytes) - Page size: 32 or 64 Bytes  Ultra Low Energy Word W.

  RM3334   RM3334






Part Number RM3336
Manufacturers Adesto
Logo Adesto
Description 32-256Kbit Ultra Low Power Non-volatile Serial Memory
Datasheet RM3334 DatasheetRM3336 Datasheet (PDF)

RM333X Series 32-256Kbit Ultra Low Power Non-volatile Serial Memory - SPI Bus Features ADVANCE DATASHEET  Memory array: 32-256Kbit EEPROM-compatible non-volatile serial memory  Multiple supply voltages for minimum power consumption - VDDC: 1.17-1.23V - VDDIO: 3.0-3.6V  Serial peripheral interface (SPI) compatible -Supports SPI modes 0 and 3  1.0 MHz maximum clock rate  Flexible Programming - Byte/Page Program (1 to 32 or 64Bytes) - Page size: 32 or 64 Bytes  Ultra Low Energy Word W.

  RM3334   RM3334







Part Number RM3335
Manufacturers Adesto
Logo Adesto
Description 32-256Kbit Ultra Low Power Non-volatile Serial Memory
Datasheet RM3334 DatasheetRM3335 Datasheet (PDF)

RM333X Series 32-256Kbit Ultra Low Power Non-volatile Serial Memory - SPI Bus Features ADVANCE DATASHEET  Memory array: 32-256Kbit EEPROM-compatible non-volatile serial memory  Multiple supply voltages for minimum power consumption - VDDC: 1.17-1.23V - VDDIO: 3.0-3.6V  Serial peripheral interface (SPI) compatible -Supports SPI modes 0 and 3  1.0 MHz maximum clock rate  Flexible Programming - Byte/Page Program (1 to 32 or 64Bytes) - Page size: 32 or 64 Bytes  Ultra Low Energy Word W.

  RM3334   RM3334







Part Number RM3333
Manufacturers Adesto
Logo Adesto
Description 32-256Kbit Ultra Low Power Non-volatile Serial Memory
Datasheet RM3334 DatasheetRM3333 Datasheet (PDF)

RM333X Series 32-256Kbit Ultra Low Power Non-volatile Serial Memory - SPI Bus Features ADVANCE DATASHEET  Memory array: 32-256Kbit EEPROM-compatible non-volatile serial memory  Multiple supply voltages for minimum power consumption - VDDC: 1.17-1.23V - VDDIO: 3.0-3.6V  Serial peripheral interface (SPI) compatible -Supports SPI modes 0 and 3  1.0 MHz maximum clock rate  Flexible Programming - Byte/Page Program (1 to 32 or 64Bytes) - Page size: 32 or 64 Bytes  Ultra Low Energy Word W.

  RM3334   RM3334







Part Number RM333024
Manufacturers TE
Logo TE
Description Power Relay
Datasheet RM3334 DatasheetRM333024 Datasheet (PDF)

General Purpose Relays Industrial Relays Power Relay RM 2/3/7 n 2/3 pole 10/16A, 2 form C (CO) or 3 form C (CO) contacts n Switching capacity up to 6000VA n DC or AC coil n Mechanical indicator n Push-to-test button n Plug-in version, PCB terminals, chassis- or DIN-rail mount SCHRACK Typical applications Elevator control, power supplies Z F0163-B Approvals VDE Cert. No. 40003144, UL E214025 Technical data of approved types on request Contact Data RM2 RM3 RM7 Contact arrangeme.

  RM3334   RM3334







32-256Kbit Ultra Low Power Non-volatile Serial Memory

RM333X Series 32-256Kbit Ultra Low Power Non-volatile Serial Memory - SPI Bus Features ADVANCE DATASHEET  Memory array: 32-256Kbit EEPROM-compatible non-volatile serial memory  Multiple supply voltages for minimum power consumption - VDDC: 1.17-1.23V - VDDIO: 3.0-3.6V  Serial peripheral interface (SPI) compatible -Supports SPI modes 0 and 3  1.0 MHz maximum clock rate  Flexible Programming - Byte/Page Program (1 to 32 or 64Bytes) - Page size: 32 or 64 Bytes  Ultra Low Energy Word Write -32 bit Word Write consuming 50 nJ  Low power consumption -10 µA active Read current @ 500 kbit/s (Typical) -10 µA active Write current @ 10 kbit/s (Typical) -50 nA Ultra-Deep Power-Down current  Auto Ultra-Deep Power-Down -Device can enter Ultra-Deep Power-Down automatically after finishing a Write operation  Self-timed write cycles  Hardware reset  8-lead SOIC package  RoHS-compliant and halogen-free packaging  Data Retention: 10.


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