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RN1103 Datasheet

Part Number RN1103
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1103 DatasheetRN1103 Datasheet (PDF)

RN1101~RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN1104,RN1105,RN1106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2101~RN2106 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 4.

  RN1103   RN1103






Part Number RN1109
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1103 DatasheetRN1109 Datasheet (PDF)

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2107~2109 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base vol.

  RN1103   RN1103







Part Number RN1108
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1103 DatasheetRN1108 Datasheet (PDF)

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2107~2109 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base vol.

  RN1103   RN1103







Part Number RN1107
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1103 DatasheetRN1107 Datasheet (PDF)

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2107~2109 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base vol.

  RN1103   RN1103







Part Number RN1106MFV
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet RN1103 DatasheetRN1106MFV Datasheet (PDF)

RN1101MFV to RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly c.

  RN1103   RN1103







Part Number RN1106
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1103 DatasheetRN1106 Datasheet (PDF)

RN1101~RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN1104,RN1105,RN1106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2101~RN2106 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 4.

  RN1103   RN1103







Silicon NPN Transistor

RN1101~RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN1104,RN1105,RN1106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2101~RN2106 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1101~1106 RN1101~1106 RN1101~1104 RN1105, 1106 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 10 5 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 2.4mg Unit V V V mA mW °C °C ― ― 2-2H1A 1 2001-06-07 RN1101~RN1106 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1101~1106 RN1101 RN1102 Emitter cut-off current RN1103 RN1104 RN1105 RN1106 RN1101 RN1102 DC current gain RN1103 RN1104 RN1105 RN1106 Collector-emitter saturation voltage RN1101~1106 RN1101 RN1102 Input voltage (ON) RN1103 RN1104 RN1105 RN1106 Input voltage (OFF) Transition frequency Collector Output capacitance RN1101~1104 RN1105, 1106 RN1101~1106 RN1101~1106 RN1101 RN1102 Input resistor RN1103 RN1104 RN1105 RN1106 RN1101~1104 Resistor ratio RN1105 RN1106 R1/R2 ― R1 ― VI (OFF) f.


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