RN1105

RN1101~RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN1104,RN1105,RN1106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2101~RN2106 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1101~1106 RN1101~1106 RN1101~1104 RN1105, 1106 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 10 5 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 2.4mg Unit V V V mA mW °C °C ― ― 2-2H1A 1 2001-06-07 RN1101~RN1106 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1101~1106 RN1101 RN1102 Emitter cut-off current RN1103 RN1104 RN1105 RN1106 RN1101 RN1102 DC current gain RN1103 RN1104 RN1105 RN1106 Collector-emitter saturation voltage RN1101~1106 RN1101 RN1102 Input voltage (ON) RN1103 RN1104 RN1105 RN1106 Input voltage (OFF) Transition frequency Collector Output capacitance RN1101~1104 RN1105, 1106 RN1101~1106 RN1101~1106 RN1101 RN1102 Input resistor RN1103 RN1104 RN1105 RN1106 RN1101~1104 Resistor ratio RN1105 RN1106 R1/R2 ― R1 ― VI (OFF) f...