RN1108

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2107~2109 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1107~1109 RN1107~1109 RN1107 Emitter-base voltage RN1108 RN1109 Collector current Collector power dissipation Junction temperature Storage temperature range RN1107~1109 RN1107~1109 RN1107~1109 RN1107~1109 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 2.4mg Unit V V ― ― 2-2H1A V mA mW °C °C 1 2001-06-07 RN1107~1109 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1107~1109 RN1107 Emitter cut-off current RN1108 RN1109 RN1107 DC current gain RN1108 RN1109 Collector-emitter saturation voltage RN1107~1109 RN1107 Input voltage (ON) RN1108 RN1109 RN1107 Input voltage (OFF) RN1108 RN1109 Translation frequency Collector output capacitance RN1107~1109 RN1107~1109 RN1107 Input Resistor RN1108 RN1109 RN1107 Resistor Ratio RN1108 RN1109 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB...