RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circui...
RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2107~2109 Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No. RN1107 RN1108 RN1109
R1 (kΩ) 10 22 47
R2 (kΩ) 47 47 22
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base
voltage Collector-emitter
voltage RN1107~1109 RN1107~1109 RN1107 Emitter-base
voltage RN1108 RN1109 Collector current Collector power dissipation Junction temperature Storage temperature range RN1107~1109 RN1107~1109 RN1107~1109 RN1107~1109 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 100 150 −55~150
JEDEC EIAJ TOSHIBA Weight: 2.4mg
Unit V V
― ― 2-2H1A
V
mA mW °C °C
1
2001-06-07
RN1107~1109
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current RN1107~1109 RN1107 Emitter cut-off current RN1108 RN1109 RN1107 DC current gain RN1108 RN1109 Collector-emitter saturation
voltage RN1107~1109 RN1107 Input
voltage (ON) RN1108 RN1109 RN1107 Input
voltage (OFF) RN1108 RN1109 Translation frequency Collector output capacitance RN1107~1109 RN1107~1109 RN1107 Input Resistor RN1108 RN1109 RN1107 Resistor Ratio RN1108 RN1109 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB...