RN1112F,RN1113F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112F,RN1113F
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Unit: mm
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector pow.
Silicon NPN Epitaxial Type Transistor
RN1112F,RN1113F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112F,RN1113F
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Unit: mm
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
Ic Pc Tj Tstg
Rating
50 50
Unit JEDEC V EIAJ V TOSHIBA
5V
100 mA
100 mW
150 °C
−55~150
°C
― ― 2-2HA1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1112F RN1113F
Symbol
ICBO IEBO hFE VCE (sat)
fT Cob
R1
Test Circuit
Test Condition
― VCB = 50V, IE = 0
― VEB = 5V, IC = 0
― VCE = 5V, IC = 1mA
― IC = 5mA, IB = 0.25mA
― VCE = 10V, IC = 5mA
― VCB = 10V, IE = 0, f = 1MHz
――
Min
― ― 120 ― ― ― 15.4 32.9
Typ.
― ― ― 0.1 250 3 22 47
Max
100 100 700 0.3 ―
6 28.6 61.1
Unit
nA nA ― V MHz pF
kΩ
1 2001-06-07
RN1112F,RN1113F
2 2001-06-07
RN1112F,RN1113F
3 2001-06-07
Type Name RN1112F
RN1113F
Marking
RN1112F,RN1113F
4 2001-06-07
RN1112F,RN1113F
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continu.