RN1207

RN1207~RN1209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1207,RN1208,RN1209 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2207~2209 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2207 RN2208 RN2208 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1207 Emitter-base voltage RN1208 RN1209 Collector current Collector power dissipation Junction temperature Storage temperature range Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 300 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A Unit V V V mA mW °C °C 1 2001-06-07 RN1207~RN1209 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1207 Emitter cut-off current RN1208 RN1209 RN1207 DC current gain RN1208 RN1209 Collector-emitter saturation voltage RN1207 Input voltage (ON) RN1208 RN1209 RN1207 Input voltage (OFF) RN1208 RN1209 Translation frequency Collector output capacitance RN1207 Input resistor RN1208 RN1209 RN1207 Resistor Ratio RN1208 RN1209 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VCE = 5V, IC = 0.1mA VCE = 0.2V, IC = 5mA IC = 5mA, IB = 0.25mA VCE = 5...