RN1313

www.DataSheet4U.com RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2312, RN2313 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 100 100 150 125 −55~125 Unit V V V mA mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.006g ― SC-70 2-2E1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN1312 RN1313 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 15.4 32.9 Typ. ― ― ― 0.1 250 3 22 47 Max 100 100 700 0.3 ― 6 28.6 61.1 V MHz pF kΩ Unit nA nA 1 2001-06-07 www.DataSheet4U.com RN1312,RN1313 2 2001-06-07 www.DataSheet4U.com RN1312,RN1313 3 2001-06-07 www.DataSheet4U.com RN1312,RN1313 Type Name Marking RN1312 RN1313 4 2001-06-0...