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RN1317 Datasheet

Part Number RN1317
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1317 DatasheetRN1317 Datasheet (PDF)

www.DataSheet4U.com RN1314~RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2314~RN2318 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1314 RN1315 RN1316 RN1317 RN1318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10.

  RN1317   RN1317






Part Number RN1318
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1317 DatasheetRN1318 Datasheet (PDF)

www.DataSheet4U.com RN1314~RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2314~RN2318 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1314 RN1315 RN1316 RN1317 RN1318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10.

  RN1317   RN1317







Part Number RN1316
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1317 DatasheetRN1316 Datasheet (PDF)

www.DataSheet4U.com RN1314~RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2314~RN2318 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1314 RN1315 RN1316 RN1317 RN1318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10.

  RN1317   RN1317







Part Number RN1315
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1317 DatasheetRN1315 Datasheet (PDF)

www.DataSheet4U.com RN1314~RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2314~RN2318 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1314 RN1315 RN1316 RN1317 RN1318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10.

  RN1317   RN1317







Part Number RN1314
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet RN1317 DatasheetRN1314 Datasheet (PDF)

www.DataSheet4U.com RN1314~RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2314~RN2318 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1314 RN1315 RN1316 RN1317 RN1318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10.

  RN1317   RN1317







Silicon NPN Transistor

www.DataSheet4U.com RN1314~RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2314~RN2318 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1314 RN1315 RN1316 RN1317 RN1318 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1314~1318 RN1314 RN1315 Emitter-base voltage RN1316 RN1317 RN1318 Collector current Collector power dissipation Junction temperature Storage temperature range RN1314~1318 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 5 6 7 15 25 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.006g ― SC-70 2-2E1A Unit V V V mA mW °C °C 1 2001-06-07 www.DataSheet4U.com RN1314~RN1318 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1314~1318 RN1314~1318 RN1314 RN1315 Emitter cut-off current RN1316 RN1317 RN1318 DC current gain Collector-emitter saturation voltage RN1314~16,18 RN1317 RN1314~1318 RN1314 RN1315 Input voltage (ON) RN1316 RN1317 RN1318 RN1314 RN1315 Input voltage (OFF) RN1316 RN1317 RN1318 Transition frequency Collector Output capacitance RN1314~1318 RN1314~1318 RN1314 RN1315 Input resistor RN1316 RN1317 RN1318 RN1314 RN1315 Resistor ratio RN1316 RN1317 .


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