RN1410,RN1411
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1410,RN1411
Switching, Inverter Circuit, In...
RN1410,RN1411
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1410,RN1411
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2410, RN2411 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 5 100 200 150 −55~125 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.012g
TO-236MOD SC-59 2-3F1A
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Transition frequency Collector output capacitance Input resistor RN1410 RN1411 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 V MHz pF kΩ Unit nA nA
1
2001-06-07
RN1410,RN1411
2
2001-06-07
RN1410,RN1411
3
2001-06-07
RN1410,RN1411
Type Name Marking
RN1410
RN1411
4
2001-06-07
RN1410,RN1411
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve th...