RN1441

RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) l Low on resistance: RON = 1Ω (typ.) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit in mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 0.012g TO-236MOD SC-59 2-3F1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 25 300 200 150 −55~150 Unit V V V mA mW °C °C Marking Type No. RN1441 RN1442 RN1443 RN1444 HFE classification A KA LA NA CA B KB LB NB CB 1 2001-06-07 RN1441~RN1444 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance RN1441 Input resistor RN1442 RN1443 RN1444 R1 ― ― Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit Test Condition VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 6V, IC = 4mA VCB = 10V, IE = 0, f = 1MHz Min Typ. Max 0.1 0.1 1200 0.1 V MHz pF Unit µA µA ― ― ― ― ― ― ― ― 200 ― ― ― ― 30 4.8 5.6 10 22 2.2 ― ― ― 3.9 7 15.4 1...