| Part Number | RN2606 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, ... |
| Features |
e
Collector current Collector power dissipation Junction temperature Storage temperature range
RN2601 to RN2606 RN2601 to RN2604 RN2605, RN2606
RN2601 to RN2606
VCBO VCEO
VEBO
IC PC* Tj Tstg
−50
V
−50
V
−10 V
−5
−100
mA
300
mW
150
C
−55 to 150
C
Note: Using continuously under heavy... |
| Datasheet | RN2606 pdf datasheet |
| Part Number | RN2609 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon PNP Transistor |
| Description | RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And. |
| Features |
(Ta = 25°C) (Q1, Q2 Common)
Characteristic Collector cut-off current RN2607~RN2609 RN2607 Emitter cut-off current RN2608 RN2609 RN2607 DC current gain RN2608 RN2609 Collector-emitter saturation voltage RN2607~RN2609 RN2607 Input voltage (ON) RN2608 RN2609 RN2607 Input voltage (OFF) RN2608 RN2609 Tr. |
| Datasheet | RN2609 pdf datasheet |
| Part Number | RN2608 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter . |
| Features |
2607 RN2608
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
−50
V
VCEO
−50
V
−6
VEBO
V
−7
IC
−100
mA
PC*
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperatu. |
| Datasheet | RN2608 pdf datasheet |
| Part Number | RN2607 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | RN2607,RN2608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2607, RN2608 Switching, Inverter . |
| Features |
2607 RN2608
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
−50
V
VCEO
−50
V
−6
VEBO
V
−7
IC
−100
mA
PC*
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperatu. |
| Datasheet | RN2607 pdf datasheet |
| Part Number | RN2605 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | RN2601 to RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2601, RN2602, RN2603 RN2604, . |
| Features |
e
Collector current Collector power dissipation Junction temperature Storage temperature range
RN2601 to RN2606 RN2601 to RN2604 RN2605, RN2606
RN2601 to RN2606
VCBO VCEO
VEBO
IC PC* Tj Tstg
−50
V
−50
V
−10 V
−5
−100
mA
300
mW
150
C
−55 to 150
C
Note: Using continuously under heavy. |
| Datasheet | RN2605 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy