FET. RQA0004LXAQS Datasheet

RQA0004LXAQS Datasheet PDF

Part RQA0004LXAQS
Description Silicon N-Channel MOS FET
Feature www.DataSheet4U.com RQA0004LXAQS Silicon N-Channel MOS FET REJ03G1567-0100 Rev.1.00 Jul 04, 2007 F.
Manufacture Renesas Technology
Datasheet
Download RQA0004LXAQS Datasheet

www.DataSheet4U.com RQA0004LXAQS Silicon N-Channel MOS FET RQA0004LXAQS Datasheet





RQA0004LXAQS
www.DataSheet4U.com
RQA0004LXAQS
Silicon N-Channel MOS FET
Features
High Output Power, High Gain, High Efficiency
Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK R )
3
321
4
1
REJ03G1567-0100
Rev.1.00
Jul 04, 2007
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “LX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
0.3
3
150
–50 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1567-0100 Rev.1.00 Jul 04, 2007
Page 1 of 12



RQA0004LXAQS
RQA0004LXAQS
www.DaEtalSehceettr4iUc.caolmCharacteristics
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
Power Added Efficiency
PAE
Min.
0.3
Typ
0.6
0.43
10
5
0.4
29.7
0.93
68
Max.
2
±2
0.9
Unit
µA
µA
V
S
pF
pF
pF
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 0.3 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 6 V, IDQ = 50 mA
f = 520 MHz
Pin = +13 dBm (20 mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
5
4
3
2
1
Typical Output Characteristics
0.4 2.0 V
Pulse Test
1.75 V
0.3
1.5 V
0.2
1.25 V
0.1
VGS = 1.0 V
0 50 100 150 200
Case Temperature TC (°C)
Typical Transfer Characteristics
0.5
VDS = 6 V
Pulse Test
0.4
|yfs|
0.3
0.2
ID
0.1
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Drain Current
1
VDS = 6 V
Pulse Test
0.1
0 0.5 1.0 1.5 2.0
Gate to Source Voltage VGS (V)
0.01 0.1
Drain Current ID (A)
1
REJ03G1567-0100 Rev.1.00 Jul 04, 2007
Page 2 of 12




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