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RQA0005MXAQS
Silicon N-Channel MOS FET
REJ03G1568-0100 Rev.1.00 Jul 04, 2007
Features
• High Outpu...
www.DataSheet4U.com
RQA0005MXAQS
Silicon N-Channel MOS FET
REJ03G1568-0100 Rev.1.00 Jul 04, 2007
Features
High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R )
3
3
2
1 1 4
1. Gate 2. Source 3. Drain 4. Source
2, 4
Note:
Marking is “MX”. *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 0.8 9 150 –50 to +150 Unit V V A W °C °C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1568-0100 Rev.1.00 Jul 04, 2007 Page 1 of 7
RQA0005MXAQS
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Electrical Characteristics
(Ta = 25°C)
Item Zero gate
voltage drain current Gate to source leakage current Gate to source cutoff
voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Power Added Efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Min. — — 0.15 — — — — — — — Typ — — 0.45 1.1 22 12 2.6 33 2 68 Max. 10 ±2 0.75 — — — — — — — Unit µA µA V S pF pF pF dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = ±5 V, VDS = 0 VDS = 6 V, ID = 1mA VDS = 6 V, ID = 600mA VGS = 5 V, VDS...