RQA0008RXDQS

www.DataSheet4U.com RQA0008RXDQS Silicon N-Channel MOS FET REJ03G1326-0100 Rev.1.00 Oct 16, 2006 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A R ) (Package Name : UPAK     3 3 2 1 1 1. Gate 2. Source 3. Drain 4. Source 4 2, 4 Note: Marking is “RX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note1: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote1 Tch Tstg Ratings 16 ±5 2.4 10 150 –55 to +150 Unit V V A W °C °C This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested. Rev.1.00 Oct 16, 2006 page 1 of 12 RQA0008RXDQS www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Power Added Efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Min. — — 0.15 1.7 — — — 35 3.16 50 Typ — — 0.4 2.4 44 25 6.0 36 3.98 65 Max. 10 ±2 0.8 3.1 — — — — — — Unit µA µA V S pF pF pF dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = ±5 V, VDS = 0 VDS = 6 V, ID = 1 mA VDS = 6 V, ID = 1.2 A VGS = 5 V, VD...