RQJ0301HGDQS

RQJ0301HGDQS Silicon P Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “HG”. REJ03G1265-0300 Rev.3.00 Jun 05, 2006 2, 4 D 1. Gate 1 G 2. Drain 3. Source 4. Drain S 3 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (pulse) Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 1 s, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings –30 +10 / –20 –5.2 –7.6 –5.2 1.5 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A W W °C °C Rev.3.00 Jun 05, 2006 page 1 of 6 RQJ0301HGDQS Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain ...