RQJ0302NGDQA
Silicon P Channel MOS FET Power Switching
Features
Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A)
Low drive current High speed switching 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “NG”.
Preliminary Datasheet
R07DS0294EJ0600 Rev.6.00
Jan 10, 2014
3 D
G 1. Sou...
