MOSFET. RSJ650N10 Datasheet

RSJ650N10 Datasheet PDF


Part RSJ650N10
Description MOSFET
Feature .
Manufacture ROHM
Datasheet
Download RSJ650N10 Datasheet


RSJ650N10 Datasheet
4V Drive Nch MOSFET RSJ650N10 FRA z Structure Silicon N-chan RSJ650N10FRA Datasheet




RSJ650N10
Data Sheet
4V Drive Nch MOSFET
RSJ650N10
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package.
3) 4V drive.
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ650N10
Taping
TL
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
PD *2
Tch
Range of storage temperature
Tstg
Limits
100
20
65
130
65
130
100
150
55 to 150
*1 PW10s, Duty cycle1%
*2 TC=25°C
*3 Please use within the range of SOA.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
1
2
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol
Rth (ch-c)*
Limits
1.25
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A



RSJ650N10
RSJ650N10
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on*)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
*Pulsed
Min.
-
100
-
1
-
-
45
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
6.5
7
-
10780
785
560
45
170
640
480
260
24
60
Max.
10
-
1
2.5
9.1
9.8
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=100V, VGS=0V
V VDS=10V, ID=1mA
mID=32.5A, VGS=10V
ID=32.5A, VGS=4V
S VDS=10V, ID=32.5A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 50V, ID=32.5A
ns VGS=10V
ns RL=1.54
ns RG=10
nC VDD 50V, ID=32.5A
nC VGS=10V
nC
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Min.
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5 V Is=65A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.06 - Rev.A






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