RSR020P05FRA

RSR020P05FRA Pch -45V -2.0A Power MOSFET VDSS RDS(on) (Max.) ID PD -45V 190mW -2.0A 1.0W lOutline TSMT3 Datasheet AEC-Q101 Qualified (1) (2) (3) lFeatures 1) Low on - resistance. lInner circuit 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant (1) Gate (2) Source (3) Drain *1 BODY DIODE *2 ESD PROTECTION DIODE lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TL ZH Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value -45 2.0 8.0 20 1.0 0.54 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.08 - Rev.A RSR020P05FRA lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 125 °C/W - - 232 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Values Min. Typ. Max. Unit -45 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C - -43 - mV/°C Zero gate voltage drain current IDSS VDS = -45V, VGS = 0V - - -...