RT3CLLM

www.DataSheet4U.com PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type DESCRIPTION RT3CLLM is a compound transistor built with two 2SC3052 chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE Silicon npn epitaxial type Each transistor elements are independent. Mini package for easy mounting 2.0 APPLICATION For low frequency amplify application 0.65 0.65 0～0.1 Tr1 Tr2 TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC（Total） Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Ta=25℃） Junction temperature Storage temperature RATING 50 6 50 200 150 ＋125 -55～＋125 UNIT V V V mA mW ℃ ℃ 6 5 4 MARKING .C L L １ 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob NF Parameter Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Noise figure Test conditions IC=100μA,RBE=∞ VCB =50V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=0.1mA IC=100mA,IB=10mA VCE...