PRELIMINARY
RT3T14M
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT...
PRELIMINARY
RT3T14M
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT3T14M is a composite transistor built with RT1N144 chip and RT1P144 chip in SC-88 package.
FEATURE
Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting
OUTLINE DRAWING
2.1 1.25
Unit mm
2.0 0.65 0.65
APPLICATION
Inverted circuit, switching circuit, interface circuit, driver circuit
0.13 0.2
0.9 0.65 0 0.1
PNP built in transistor of ” ”sign is abbreviation.
RTr1
R1
R2 R2
R1
RTr2
TERMINAL CONNECTOR
EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1
JEITA SC-88
MAXIMUM RATING (Ta=25 )
SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg
PARAMETER Collector to Base
voltage Emitter to Base
voltage Collector to Emitter
voltage Collector current Peak Collector current Collector dissipation Total, Ta=25 Junction temperature Storage temperature
RATING 50 6 50 100 200 150 150
-55 150
UNIT V V V mA mA
mW
MARKING
.
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3T14M
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25 )
Symbol
Parameter
Test conditions
V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1
fT
Collector to Emitter break down
voltage Collector cut off current DC forward current gain Collector to Emitter saturation
voltage Input on
voltage Input off
voltage Input resistor Resistor ratio
Gain band width product
IC=100 A,RBE= VCB =50V,IE=0 ...