DatasheetsPDF.com

RT3T55M Datasheet

Part Number RT3T55M
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT3T55M DatasheetRT3T55M Datasheet (PDF)

PRELIMINARY RT3T55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T55M is a composite transistor built with RT1N141 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING 2.1 1.25 Unit mm 2.0 0.65 0.65 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.13 0.2 0.9 0.65 0 0.1 PNP built in transistor .

  RT3T55M   RT3T55M






Part Number RT3T55U
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT3T55M DatasheetRT3T55U Datasheet (PDF)

RT3T55U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T55U is a RT1N144 chip package. composite transistor and RT1P144 chip built with in USM6F FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ※PNP built in transistor of ”-”sign is abbreviation. OUTLINE DRAWING 1.6 ±0.05 1pin マーク 1.2 ±0.05 (0.5) 6.

  RT3T55M   RT3T55M







Transistor

PRELIMINARY RT3T55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T55M is a composite transistor built with RT1N141 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING 2.1 1.25 Unit mm 2.0 0.65 0.65 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.13 0.2 0.9 0.65 0 0.1 PNP built in transistor of ” ”sign is abbreviation. RTr1 R1 R2 R2 R1 RTr2 TERMINAL CONNECTOR EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1 JEITA SC-88 MAXIMUM RATING (Ta=25 ) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Total, Ta=25 Junction temperature Storage temperature RATING UNI T V V V mA mA mW MARKING . ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3T55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25 ) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) VI(ON) Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input on voltage VI(OFF) Input off voltage R1 Input resistor R2/R1 Resistor ratio fT Gain band width product TYPICAL CHARACTERISTICS Tr1 IC=100µA,RBE=∞ VCB =50V,.


2016-05-15 : SB320    SB330    SB340    SB350    SB360    SB370    SB320    SB330    SB340    SB350   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)