RT3T77M

PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3T77M is compound transistor built with RT1N140 chip and RT1P140 chip in SC-88 package. OUTLINE DRAWING Unit：mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit . ⑥ RTr1 ⑤ R1 ④ RTr2 R1 ①② ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL PARAMETER RATING VCBO VEBO VCEO IC ICM PC Tj Tstg Collector to Base voltage 50 Emitter to Base voltage 6 Collector to Emitter voltage 50 Collector current 100 Peak Collector current 200 Collector dissipation（Total, Ta=25℃） 150 Junction temperature ＋150 Storage temperature -55～＋150 ※PNP built in transistor of ”－”sign is abbreviation. UNIT V V V mA mA mW ℃ ℃ MARKING 654 .T7 7 １23 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) R1 Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor IC=100μA,RBE=∞ VCB =50V,IE=0 VCE=5V,IC=1mA IC=10mA,IB=0.5mA - fT Gain band...