PRELIMINARY
RT3TBBM
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT...
PRELIMINARY
RT3TBBM
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
DESCRIPTION
RT3TBBM is compound transistor built with RT1N231 chip and RT1P231 chip in SC-88 package.
OUTLINE DRAWING
Unit:mm
FEATURE
Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
⑥⑤④
RTr1
R1
R2 R2
R1 ①②
RTr2 ③
TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1
JEITA:SC-88
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base
voltage
50
VEBO
Emitter to Base
voltage
10
VCEO
Collector to Emitter
voltage
50
VIN Input
voltage
12
IC Collector current
100
ICM Peak Collector current
200
PC Collector dissipation(Total, Ta=25℃)
150
Tj Junction temperature
+150
Tstg Storage temperature
-55~+150
※PNP built in transistor of ”-”sign is abbreviation.
UNIT V V V V mA mA
mW ℃
℃
MARKING
⑥⑤④
.T B B
①②③
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3TBBM
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP)
Symbol
V(BR)CEO ICBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1
fT
Parameter
Test conditions
Collector to Emitter break down
voltage Collector cut off current DC forward current gain Collector to Emitter saturation
voltage Input on
voltage Input off
voltage Input ...