DatasheetsPDF.com

RT3TTM Datasheet

Part Number RT3TTM
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT3TTM DatasheetRT3TTM Datasheet (PDF)

PRELIMINARY RT3TTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TTTM is a composite transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit:mm 0.13 0.2 ※PNP built in transistor of ”.

  RT3TTM   RT3TTM






Part Number RT3TTTM
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT3TTM DatasheetRT3TTTM Datasheet (PDF)

RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TTTM is compound transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. OUTLINE DRAWING FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit Unit:mm ⑥⑤ RTr1 R1 ④ RTr2 R1 ①② ③ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EM.

  RT3TTM   RT3TTM







Transistor

PRELIMINARY RT3TTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TTTM is a composite transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit:mm 0.13 0.2 ※PNP built in transistor of ”-”sign is abbreviation. 0.9 0.65 0~0.1 ⑥ RTr1 ⑤ R1 ④ RTr2 R1 ①② ③ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 JEITA:SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Total, Ta=25℃) Junction temperature Storage temperature RATING 50 6 50 100 200 150 +150 -55~+150 UNIT V V V mA mA mW ℃ ℃ MARKING 654 .T T T 123 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Test conditions V(BR)CEO ICBO hFE VCE(sat) R1 fT Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturation voltage Input resistor Gain band width product IC=100μA,RBE=∞ VCB =50V,IE=0 VCE=5V,IC=1mA IC=0.


2016-05-15 : SB320    SB330    SB340    SB350    SB360    SB370    SB320    SB330    SB340    SB350   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)