RTAN230X SERIES
TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
・B...
RTAN230X SERIES
TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
・Built-in bias resistor(R1=2.2kΩ) ・Small package for easy mounting. ・High reverse hFE ・Small collector to emitter saturation
voltage.
VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0.5mA) ・Low on Resistance
Ron=0.70Ω(TYP.)(@VI=5V)
APPLICATION
muting circuit , switching circuit
OUTLINE DRAWING
RTAN230T2 (PRELIMINARY)
0.2 0.8 0.2
Unit:mm
RTAN230M
2.1 0.425 1.25 0.425
0.25 2.0 1.3 0.65 0.65
0.3
① ②③
① ②③
1.2 0.8 0.4 0.4
0.9 0.7 0~0.1 0.15
0.5
EQUIVALENT CIRCUIT
R1 B (IN)
C (OUT)
E
(GND)
JEITA, JEDEC:- ISAHAYA:T-USM TERMINAL CONNECTOR
①:BASE ②:EMITTER ③:COLLECTOR
RTAN230U
1.6 0.4 0.8 0.4
①
②③
JEITA:SC-70 JEDEC:- TERMINAL CONNECTOR
①:BASE ②:EMITTER ③:COLLECTOR
RTAN230C
2.5 0.5 1.5 0.5
①
②③
1.6 1.0 0.5 0.5
0.3 2.9 1.90 0.95 0.95
0.4
0.7 0.55 0~0.1 0.15
1.1 0.8 0~0.1 0.16
JEITA:SC-75A JEDEC:-
TERMINAL CONNECTOR ①:BASE ②:EMITTER ③:COLLECTOR
JEITA:SC-59 JEDEC:Similar to TO-236
TERMINAL CONNECTOR ①:BASE ②:EMITTER ③:COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
RTAN230X SERIES
TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO VEBO VCEO IC
PC
Tj Tstg
Collector to Base
voltage Emitter to Base
voltage Collector to Emitter
voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
RTAN230T2
125(※) +125
-55~+125
RATING
RTAN230U
RTAN230M
40
...