PRELIMINARY
DESCRIPTION
RTE13LFM is compound transistor built with 2SC3052 chip and 8.2V Zener diode in SC-88 package.
FEATURE
Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting
OUTLINE DRAWING
① ② ③
2.0 0.65 0.65
APPLICATION
Power supply circuit, Driver circuit, etc
RTE13LFM
Composite Transistor Zener Diode
Silicon NPN Epitaxial Type
Unit:mm 2.1 1.25
⑥
⑤
④
0.13 0.24
0.9 0.65 0~0.1
⑥⑤④
Di Tr
①②③
①:ANODE ②:NC ③:COLLECTOR ④:EMITTER ⑤:BASE ⑥:CA.
Transistor
PRELIMINARY
DESCRIPTION
RTE13LFM is compound transistor built with 2SC3052 chip and 8.2V Zener diode in SC-88 package.
FEATURE
Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting
OUTLINE DRAWING
① ② ③
2.0 0.65 0.65
APPLICATION
Power supply circuit, Driver circuit, etc
RTE13LFM
Composite Transistor Zener Diode
Silicon NPN Epitaxial Type
Unit:mm 2.1 1.25
⑥
⑤
④
0.13 0.24
0.9 0.65 0~0.1
⑥⑤④
Di Tr
①②③
①:ANODE ②:NC ③:COLLECTOR ④:EMITTER ⑤:BASE ⑥:CATHODE
JEITA:SC-88 JEDEC:-
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC PT Tj Tstg
Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Total power dissipation(Ta=25℃) Junction temperature Storage temperature
RATING
50 50 Tr 6 200 Tr 150 Di +150 Common -55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃)
【 Tr 】
UNIT
V V V mA mW ℃ ℃
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO Collector to Emitter break down voltage
IC=100µA, RBE=∞
ICBO Collector cut off current
VCB=50V, IE=0A
IEBO Emitter cut off current
VEB=6V, IC=0A
hFE DC forward current gain
VCE=6V, IC=1mA
hFE DC forward current gain
VCE=6V, IC=0.1mA
VCE(sat) Collector to Emitter saturation voltage
IC=100mA, IB=10mA
fT Gain band width product
VCE=6V, IE=-10mA
Cob Collector output capacitance
VCB=6V, IE=0A, f=1MHz
【 Di 】
Zener voltage VZ(V)
Reverse current IR(µA)
MIN
MAX
IZ(mA)
MAX
VR(V)
7.790
8.610
5
0.5 6.5
MARKING ⑥⑤④
X01
①②③
LIMITS
MIN TYP MA.