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RTE13LFM Datasheet

Part Number RTE13LFM
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RTE13LFM DatasheetRTE13LFM Datasheet (PDF)

PRELIMINARY DESCRIPTION RTE13LFM is compound transistor built with 2SC3052 chip and 8.2V Zener diode in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING ① ② ③ 2.0 0.65 0.65 APPLICATION Power supply circuit, Driver circuit, etc RTE13LFM Composite Transistor Zener Diode Silicon NPN Epitaxial Type Unit:mm 2.1 1.25 ⑥ ⑤ ④ 0.13 0.24 0.9 0.65 0~0.1 ⑥⑤④ Di Tr ①②③ ①:ANODE ②:NC ③:COLLECTOR ④:EMITTER ⑤:BASE ⑥:CA.

  RTE13LFM   RTE13LFM






Transistor

PRELIMINARY DESCRIPTION RTE13LFM is compound transistor built with 2SC3052 chip and 8.2V Zener diode in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting OUTLINE DRAWING ① ② ③ 2.0 0.65 0.65 APPLICATION Power supply circuit, Driver circuit, etc RTE13LFM Composite Transistor Zener Diode Silicon NPN Epitaxial Type Unit:mm 2.1 1.25 ⑥ ⑤ ④ 0.13 0.24 0.9 0.65 0~0.1 ⑥⑤④ Di Tr ①②③ ①:ANODE ②:NC ③:COLLECTOR ④:EMITTER ⑤:BASE ⑥:CATHODE JEITA:SC-88 JEDEC:- MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VEBO IC PT Tj Tstg Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Total power dissipation(Ta=25℃) Junction temperature Storage temperature RATING 50 50 Tr 6 200 Tr 150 Di +150 Common -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃) 【 Tr 】 UNIT V V V mA mW ℃ ℃ SYMBOL PARAMETER TEST CONDITIONS V(BR)CEO Collector to Emitter break down voltage IC=100µA, RBE=∞ ICBO Collector cut off current VCB=50V, IE=0A IEBO Emitter cut off current VEB=6V, IC=0A hFE DC forward current gain VCE=6V, IC=1mA hFE DC forward current gain VCE=6V, IC=0.1mA VCE(sat) Collector to Emitter saturation voltage IC=100mA, IB=10mA fT Gain band width product VCE=6V, IE=-10mA Cob Collector output capacitance VCB=6V, IE=0A, f=1MHz 【 Di 】 Zener voltage VZ(V) Reverse current IR(µA) MIN MAX IZ(mA) MAX VR(V) 7.790 8.610 5 0.5 6.5 MARKING ⑥⑤④ X01 ①②③ LIMITS MIN TYP MA.


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