〈SMALL-SIGNAL TRANSISTOR〉
RTGN14BAP
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE
DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor.
FEATURE ● Built-in bias resistor (R2=10kΩ) ● High collector current IC=1A ● Built-in zener diode between collector and base
APPLICATION Motor driver circuit
OUTLINE DRAWING
4.6 MAX 1.6
Unit:mm
1.5
0.8 MIN
2.5 4.2 MAX E CB
0.53 MAX
1.5 3.0
0.48 MAX
0.4
MARKING
EQUIVALENT CIRCUIT
C
B R1
R2 E
TERM.
Transistor
〈SMALL-SIGNAL TRANSISTOR〉
RTGN14BAP
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE
DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor.
FEATURE ● Built-in bias resistor (R2=10kΩ) ● High collector current IC=1A ● Built-in zener diode between collector and base
APPLICATION Motor driver circuit
OUTLINE DRAWING
4.6 MAX 1.6
Unit:mm
1.5
0.8 MIN
2.5 4.2 MAX E CB
0.53 MAX
1.5 3.0
0.48 MAX
0.4
MARKING
EQUIVALENT CIRCUIT
C
B R1
R2 E
TERMINAL CONNECTOR
E: EMITTER
C: COLLECTOR
B: BASE
JEDEC :
MARKING
A part of EIAJ standard
NG
The last number Marking month of fisical year
Running No.
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO VEBO VCEO
IC ICM PC Tj Tstg
Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current (DC) Collector current (pulse) Collector dissipation Junction temperature Storage temperature
RATING 60±10 10 60±10 1 2 500 +150
-55~+150
UNIT V V V A A
mW ℃
℃
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
RTGN14BAP
TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Parameter
ICBO VIL hFE1 hFE2 hFE3 VCE(sat) R2
Collector cut off current Input voltage (OFF) DC forward current gain DC forward current gain DC forward current gain C to E saturation voltage Emitter – Base resistor
Test conditions
VCB=40V,IE=0 VCE=5V,IC=100μA VCE=2V,IC=0.1A VCE=2V,IC=0.5A VCE=2V,IC=1A Ic=500mA,IB.