RU190N08Q

RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 80 ±25 175 -55 to 175 190 ① V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 700 190 ② ① ① A 140 326 W 163 0.46 °C/W mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy ,Single Pulsed 1225 Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 www.ruichips.com http://www.Datasheet4U.com RU190N08Q Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU190N08Q Parameter Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 80V, VGS=0V TJ=85°C VDS=VGS, IDS=2...