RU20P4C6
P-Channel Advanced Power MOSFET
Features
• -20V/-4A, RDS (ON) =35mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-...
RU20P4C6
P-Channel Advanced Power
MOSFET
Features
-20V/-4A, RDS (ON) =35mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Applications
Load Switch Power Management Battery Protection
Pin Description
S D D
G
D
D SOT23-6
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source
Voltage Gate-Source
Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings
EAS④
Avalanche Energy, Single Pulsed
S
P-Channel
MOSFET
Rating
Unit
TA=25°C
-20 ±10 150 ...