RU7580R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 75V/80A, RDS (ON) =8mΩ(Typ.)@VGS=10V
• Super High Dense Cell ...
RU7580R
N-Channel Advanced Power
MOSFET
MOSFET
Features
75V/80A, RDS (ON) =8mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
Motor Control
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012
Rating
75 ±25 175 -55 to 175 80
①
320 80 58 125
62.5 1.2
Unit
V °C °C A
A A W W °C/W
169 mJ www.ruichips.com
RU7580R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU7580R Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown
Voltage
IDSS Zero Gate
Voltage Drain Current
VGS(th) Gate Threshold
Voltage
IGSS Gate Leakage Current
③
RDS(ON)
Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS=75V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V
VGS=10V, IDS=40A
75 2
V 1
µA 30 34V ±100 nA 8 10 mΩ...