RUE003N02

1.8V Drive Nch MOSFET RUE003N02 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (1)Source (2)Gate (3)Drain Abbreviated symbol : QT Applications Switching Packaging specifications Type Package Code Basic ordering unit (pieces) Taping TL 3000 RUE003N02 Equivalent circuit Drain Gate ∗2 ∗1 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Source Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed Total power dissipation ID IDP∗1 PD∗2 Channel temperature Tch Range of storage temperature Tstg ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Limits 20 ±8 ±300 ±600 150 150 −55 to +150 Unit V V mA mA mW °C °C Thermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C / W www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B RUE003N02 Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time...