MOSFET. RUF025N02 Datasheet

RUF025N02 Datasheet PDF


RUF025N02
RUF025N02
Nch 20V 2.5A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
20V
54mW
2.5A
0.8W
lFeatures
1) Low on - resistance.
2) 1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT3).
5) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TUMT3
SOT-323T
(1)
(2)
lInner circuit
(3)
(1) Gate
(2) Source
(3) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TL
XE
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
20
2.5
5
10
0.8
0.32
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/11
2013.02 - Rev.B


Part RUF025N02
Description Nch 20V 2.5A Power MOSFET
Feature RUF025N02; RUF025N02 Nch 20V 2.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 20V 54mW 2.5A 0.8W lFeat.
Manufacture Rohm
Datasheet
Download RUF025N02 Datasheet


RUF025N02 Nch 20V 2.5A Power MOSFET Datasheet VDSS RDS(on) RUF025N02 Datasheet





RUF025N02
RUF025N02
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3
RthJA *4
Values
Min. Typ. Max.
Unit
- - 156 °C/W
- - 391 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
20 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID=1mA
ΔTj referenced to 25°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
IGSS
VGS (th)
VDS = 20V, VGS = 0V
VGS = 10V, VDS = 0V
VDS = 10V, ID = 1mA
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID=1mA
ΔTj referenced to 25°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS=4.5V, ID=2.5A
VGS=2.5V, ID=2.5A
RDS(on) *5 VGS=1.8V, ID=1.3A
VGS=1.5V, ID=0.5A
VGS=4.5V, ID=2.5A, Tj=125°C
RG
gfs *5
f = 1MHz, open drain
VDS=10V, ID=2.5A
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
-
-
-
0.3
-
-
-
-
-
-
-
3.6
20
-
-
-
-1.9
39
49
65
80
65
7.5
6.0
- mV/°C
1 mA
10 mA
1.3 V
- mV/°C
54
68
91 mW
160
95
-W
-S
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/11
2013.02 - Rev.B



RUF025N02
RUF025N02
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on) *5
tr *5
td(off) *5
tf *5
VGS = 0V
VDS = 10V
f = 1MHz
VDD 10V, VGS = 4.5V
ID = 1.3A
RL = 7.7W
RG = 10W
Values
Min. Typ. Max.
- 370 -
- 90 -
- 50 -
-7-
- 15 -
- 35 -
- 15 -
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *5
Qgs *5
Qgd *5
VDD 10V, ID=2.5A
VGS = 4.5V
Values
Min. Typ. Max.
-5-
- 0.9 -
- 0.8 -
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
IS *1 Ta = 25°C
VSD *5 VGS = 0V, Is = 0.6A
- - 0.6
- - 1.2
Unit
A
V
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/11
2013.02 - Rev.B




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