RUF025N02

RUF025N02 Nch 20V 2.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 20V 54mW 2.5A 0.8W lFeatures 1) Low on - resistance. 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline TUMT3 SOT-323T (1) (2) lInner circuit (3) (1) Gate (2) Source (3) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TL XE Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value 20 2.5 5 10 0.8 0.32 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/11 2013.02 - Rev.B RUF025N02 lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 156 °C/W - - 391 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Values Min. Typ. Max. Unit 20 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS ...